Igbt toshiba MG25Q6ES51

Type Designator: MG25Q6ES51

Type: IGBT

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 200

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 35

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.8

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 70
Package: MODULE

Link download tài liệu : MG25Q6ES51